NTR4171P
Power MOSFET
? 30 V, ? 3.5 A, Single P ? Channel, SOT ? 23
Features
? Low R DS(on) at Low Gate Voltage
? Low Threshold Voltage
? High Power and Current Handling Capability
? This is a Pb ? Free Device
Applications
? Load Switch
? Optimized for Battery and Load Management Applications in
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
V (BR)DSS
? 30 V
http://onsemi.com
R DS(on) MAX
75 m W @ ? 10 V
110 m W @ ? 4.5 V
150 m W @ ? 2.5 V
I D MAX
? 2.2 A
? 1.8 A
? 1.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter Symbol
Value
Unit
P ? CHANNEL MOSFET
S
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 30
± 12
V
V
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
? 2.2
? 1.5
A
G
t ≤ 5s
T A = 25 ° C
? 3.5
D
Power Dissipation
(Note 1)
Steady
State
t ≤ 5s
T A = 25 ° C
P D
0.48
1.25
W
3
MARKING DIAGRAM/
PIN ASSIGNMENT
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I DM
T J ,
T stg
I S
? 15.0
? 55 to
150
? 1.0
A
° C
A
1
2
SOT ? 23
CASE 318
3
Drain
TRFM G
G
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
STYLE 21
1
Gate
2
Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
TRF = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Parameter
Symbol
Max
Unit
Junction ? to ? Ambient ? Steady State (Note 1)
R q JA
260
° C/W
ORDERING INFORMATION
Junction ? to ? Ambient ? t ≤ 10 s (Note 1)
R q JA
100
Device
Package
Shipping ?
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
NTR4171PT1G
NTR4171PT3G
SOT ? 23
(Pb ? Free)
SOT ? 23
3000/Tape & Reel
10000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2010
May, 2010 ? Rev. 1
1
Publication Order Number:
NTR4171P/D
相关PDF资料
NTR4501NT1 MOSFET N-CHAN 3.2A 20V SOT-23
NTR4502PT1G MOSFET P-CH 30V 1.13A SOT-23
NTR4503NT3G MOSFET N-CH 30V 1.5A SOT-23
NTS2101PT1 MOSFET P-CH 8V 1.4A SOT-323
NTS4001NT1 MOSFET N-CH 30V 270MA SOT-323
NTS4101PT1 MOSFET P-CH 20V 1.37A SOT-323
NTS4172NT1G MOSFET N-CH 30V 1.6A SC70-3
NTS4173PT1G MOSFET P-CH 30V 1.2A SC70-3
相关代理商/技术参数
NTR4501N 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.2 A, Single N−Channel, SOT−23
NTR4501NST1G 制造商:ON Semiconductor 功能描述:NFET SOT23 20V 3.2A 80MO - Tape and Reel 制造商:ON Semiconductor 功能描述:MOSFET NFET SOT23 20V 3.2A 80MO 制造商:ON Semiconductor 功能描述:REEL / NFET SOT23 20V 3.2A 80MO
NTR4501NT1 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT1G 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT1G-CUT TAPE 制造商:ON 功能描述:NTR Series N-Channel 20 V 70 mOhm 1.25 W Surface Mount Power MOSFET - SOT-23
NTR4501NT3 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT3G 功能描述:MOSFET 20V 3.2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTR4501NT3H 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: